Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first...http://www.google.com/patents/US7459404?utm_source=gb-gplus-sharePatent US7459404 - Adhesion improvement for low k dielectrics
