A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed...http://www.google.com/patents/US5960321?utm_source=gb-gplus-sharePatent US5960321 - Method of forming a contact via
