A sense amplifier is provided which is easy to sense small signal voltage levels from microstructured memory cells and is suitable for use with high-speed, high-packing-density DRAMs. The sense amplifier has a CMOS flip-flop circuit which is connected to a complementary pair of bit lines and composed...http://www.google.com/patents/US6285613?utm_source=gb-gplus-sharePatent US6285613 - Semiconductor memory device
