A method for forming electrical interconnects having different diameters and filler materials through a semiconductor wafer comprises forming first and second openings through a semiconductor, wherein the first opening has a narrower width (smaller diameter) than the second opening. A first conductive...http://www.google.com/patents/US7348671?utm_source=gb-gplus-sharePatent US7348671 - Vias having varying diameters and fills for use with a semiconductor device and methods of forming semiconductor device structures including same
