Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium...http://www.google.com/patents/US8092862?utm_source=gb-gplus-sharePatent US8092862 - Method for forming dielectric film and method for forming capacitor in semiconductor device using the same
