Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region by a gate insulator. The gate insulator...http://www.google.com/patents/US7728626?utm_source=gb-gplus-sharePatent US7728626 - Memory utilizing oxide nanolaminates
