A new method for planarization of shallow trench isolation is disclosed by the wet etching and plasma etching, due to the surface sensitivity of SACVD O.sub.3 -TEOS that depends on substrate. The method described herein includes a pad oxide layer, a silicon nitride layer, and a doped polysilicon...http://www.google.com/patents/US5811345?utm_source=gb-gplus-sharePatent US5811345 - Planarization of shallow- trench- isolation without chemical mechanical polishing 
