A semiconductor device having CMOS circuits formed on a glass substrate. The CMOS circuits are composed of TFTs. Lightly doped regions are formed only in the N-channel TFTs. When P-channel TFTs are formed, the conductivity type of the lightly doped regions is converted by a boron ion implant. Each CMOS...http://www.google.com/patents/US5949107?utm_source=gb-gplus-sharePatent US5949107 - Semiconductor device and method of fabricating same
