A method for etching bonding pad access openings in a passivation layer of an integrated circuit is described. The method utilizes a two step etching procedure wherein the first step etches isotropically through a major portion of the passivation layer under conditions which provide very high etch rate...http://www.google.com/patents/US6001538?utm_source=gb-gplus-sharePatent US6001538 - Damage free passivation layer etching process
