A non-volatile memory device includes a semiconductor substrate, a tunneling insulating layer, a charge storage layer, a blocking insulating layer, and a gate electrode. The tunneling insulating layer is on the substrate and has a first dielectric constant. The charge storage layer is on the tunneling...http://www.google.com/patents/US7253467?utm_source=gb-gplus-sharePatent US7253467 - Non-volatile semiconductor memory devices
