A FET device for operation at high voltages includes a substrate, a first well and a second well within the substrate that are doped with implants of a first type and second type, respectively. The first and second wells define a p-n junction. A field oxide layer within the second well defines a first...http://www.google.com/patents/US7375398?utm_source=gb-gplus-sharePatent US7375398 - High voltage FET gate structure
