A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a...http://www.google.com/patents/US7074656?utm_source=gb-gplus-sharePatent US7074656 - Doping of semiconductor fin devices
