A method of fabricating first and second gates comprising the following steps. A substrate having a gate dielectric layer formed thereover is provided. The substrate having a first gate region and a second gate region. A thin first gate layer is formed over the gate dielectric layer. The thin first gate...http://www.google.com/patents/US6841441?utm_source=gb-gplus-sharePatent US6841441 - Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing
