Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region...http://www.google.com/patents/US7211854?utm_source=gb-gplus-sharePatent US7211854 - Field effect devices having a gate controlled via a nanotube switching element
