Epitaxial silicon is grown to form elevated source/drain extensions for transistors on silicon-on-insulator (SOI) substrates. An offset linear layer is formed between the gate and the epitaxial silicon to prevent shorting. In one embodiment, the offset linear layer is a nitride and in another embodiment...http://www.google.com/patents/US20020171107?utm_source=gb-gplus-sharePatent US20020171107 - Method for forming a semiconductor device having elevated source and drain regions
