The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of gadolinium oxide (Gd2O3) and scandium oxide (Sc2O3) acting as a single dielectric layer with a formula of GdScO3, and a method of fabricating such a dielectric layer, is described that produces a reliable structure with a high...http://www.google.com/patents/US20090152620?utm_source=gb-gplus-sharePatent US20090152620 - ATOMIC LAYER DEPOSITION OF GdScO3 FILMS AS GATE DIELECTRICS
