An active layer is sandwiched between a first gate electrode and a second gate electrode, and an offset region is disposed in overlying and underlying relation to a third gate electrode and a fourth gate electrode, respectively, resulting in a double-gate structure that is effective to produce...http://www.google.com/patents/US5672888?utm_source=gb-gplus-sharePatent US5672888 - Thin-film transistor and thin-film transistor array
