In a method for forming a capacitor in the semiconductor memory, a lower electrode is formed on an interlayer insulator film, and a high dielectric constant insulating film is formed to cover the whole surface including the lower electrode. Furthermore, an upper electrode layer is formed to cover the...http://www.google.com/patents/US6306667?utm_source=gb-gplus-sharePatent US6306667 - Method for forming a capacitor in a semiconductor device
