A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (10) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (56) including a flux concentrating layer (52). The method includes...http://www.google.com/patents/US6211090?utm_source=gb-gplus-sharePatent US6211090 - Method of fabricating flux concentrating layer for use with magnetoresistive random access memories
