A 3D epitaxial structure is described in which metal compounds are formed in a semiconductor layer, the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. Onto this another layer can be epitaxially grown,...http://www.google.com/patents/US4728626?utm_source=gb-gplus-sharePatent US4728626 - Method for making planar 3D heterepitaxial semiconductor structures with buried epitaxial silicides
