A semiconductor processing method for forming self-aligned T-gate Lightly-Doped Drain (LDD) device of recessed channel is presented. The method comprises the steps of covering a substrate with pad oxide, forming a lightly-doped layer by ion implantation, depositing a silicon nitride layer on the...http://www.google.com/patents/US5817558?utm_source=gb-gplus-sharePatent US5817558 - Method of forming a T-gate Lightly-Doped Drain semiconductor device
