In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode...http://www.google.com/patents/US7041546?utm_source=gb-gplus-sharePatent US7041546 - Film forming method for depositing a plurality of high-k dielectric films
