Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an insulating material layer, and selectively removing...http://www.google.com/patents/US5624852?utm_source=gb-gplus-sharePatent US5624852 - Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time
