A semiconductor device is disclosed, by which the parasitic capacitance of each signal line can be decreased, the time necessary for developing the device can be decreased, and which has a structure for simply and quickly performing the characteristic evaluation of the semiconductor device. The semiconductor...http://www.google.com/patents/US6635515?utm_source=gb-gplus-sharePatent US6635515 - Method of manufacturing a semiconductor device having signal line above main ground or main VDD line
