The present invention accurately determines a first parasitic capacitance component between a conductive gate region to a drain local interconnect of a real field effect transistor, and determines a second parasitic capacitance component between the conductive gate region to a source local interconnect...http://www.google.com/patents/US6169302?utm_source=gb-gplus-sharePatent US6169302 - Determination of parasitic capacitance between the gate and drain/source local interconnect of a field effect transistor 
