In accordance with one aspect of the present invention, a method is provided for predicting the endpoint time of a semiconductor process for a layer of a wafer (14). The endpoint time is the time at which a predetermined thickness of the layer occurs. A layer thickness, calculated for a first sample...http://www.google.com/patents/US5503707?utm_source=gb-gplus-sharePatent US5503707 - Method and apparatus for process endpoint prediction based on actual thickness measurements
