A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or...http://www.google.com/patents/US6932892?utm_source=gb-gplus-sharePatent US6932892 - Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
