A method for fabricating source/drain devices. A semiconductor substrate is provided with a gate formed thereon, a first doped area is formed on a first side of the gate on the semiconductor substrate, and a second doped area is formed on a second side of the gate on the semiconductor substrate in a...http://www.google.com/patents/US20040038484?utm_source=gb-gplus-sharePatent US20040038484 - METHOD FOR FABRICATING SOURCE/DRAIN DEVICES
