Non-volatile memory devices and arrays are described that utilize reverse mode non-volatile memory cells that have band engineered gate-stacks and nano-crystal charge trapping in EEPROM and block erasable memory devices, such as Flash memory devices. Embodiments of the present invention allow a reverse...http://www.google.com/patents/US20070045718?utm_source=gb-gplus-sharePatent US20070045718 - Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection
