A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate...http://www.google.com/patents/US8119472?utm_source=gb-gplus-sharePatent US8119472 - Silicon device on Si:C SOI and SiGe and method of manufacture
