A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b)...http://www.google.com/patents/US5510276?utm_source=gb-gplus-sharePatent US5510276 - Process for producing a pressure transducer using silicon-on-insulator technology
