In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a gate oxide film...http://www.google.com/patents/US7595230?utm_source=gb-gplus-sharePatent US7595230 - Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device
