A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be...http://www.google.com/patents/US7547951?utm_source=gb-gplus-sharePatent US7547951 - Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same
