According to one embodiment (300), a method of forming a self-aligned contact can include forming adjacent conducting structures with sidewalls (302). A first insulating layer may then be formed without first forming a liner (304), such as a liner that is conventionally formed to protect underlying conducting...http://www.google.com/patents/US6734108?utm_source=gb-gplus-sharePatent US6734108 - Semiconductor structure and method of making contacts in a semiconductor structure
