Nonvolatile memory devices, such as NROM devices that have an oxide-nitride-oxide (ONO) layer beneath at least one word line structure, and methods for making same, are disclosed. The ONO layer is formed on a substrate, followed by a patterned photoresist layer being formed on the ONO layer. The patterned...http://www.google.com/patents/US6784483?utm_source=gb-gplus-sharePatent US6784483 - Method for preventing hole and electron movement in NROM devices
