A method for fabricating a transistor having a fully silicided gate is described. A silicon substrate with a semi-finished transistor formed thereon is provided, wherein the transistor comprises a gate dielectric film, a silicon gate, a cap layer on the silicon gate, a spacer and a source/drain region....http://www.google.com/patents/US6902994?utm_source=gb-gplus-sharePatent US6902994 - Method for fabricating transistor having fully silicided gate
