The instant invention is a method for fabricating a trench contact to a deep trench capacitor with a polysilicon filling in a trench hole formed in a silicon substrate. An epitaxy process is performed to selectively grow silicon above the polysilicon filling in the trench hole. An opening leading to...http://www.google.com/patents/US6989311?utm_source=gb-gplus-sharePatent US6989311 - Method for fabricating a trench contact to a deep trench capacitor having a polysilicon filling
