The present invention relates to a flash EEPROM cell, method of manufacturing the same, and method of programming and reading the same and, more particularly, to a flash EEPROM cell constructed in such a way that two floating gates are formed on top of a channel region to implement a memory cell...http://www.google.com/patents/US5812449?utm_source=gb-gplus-sharePatent US5812449 - Flash EEPROM cell, method of manufacturing the same, method of programming and method of reading the same 
