Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed...http://www.google.com/patents/US6773946?utm_source=gb-gplus-sharePatent US6773946 - Method for fabricating light-emitting diode using nanosize nitride semiconductor multiple quantum wells
