A method of fabricating an integrated circuit with ultra-shallow source/drain junctions utilizes a dummy or sacrificial gate structure. Dopants are provided through the openings associated with sacrificial spacers to form the source and drain extensions. The openings can be filled with spacers The process...http://www.google.com/patents/US5985726?utm_source=gb-gplus-sharePatent US5985726 - Damascene process for forming ultra-shallow source/drain extensions and pocket in ULSI MOSFET
