A crystal of a compound semiconductor is deposited on a substrate using a metal organic vapor phase epitaxy within a reaction enclosure having a vertical flow of deposition gas supplied through a gas injector within the deposition enclosure. The deposition gas is supplied in a plurality of divided flow...http://www.google.com/patents/US5304247?utm_source=gb-gplus-sharePatent US5304247 - Apparatus for depositing compound semiconductor crystal
