A method for forming a trench isolation structure. First, a substrate having at least one trench is provided. The trench is filled with a spin on glass (SOG) layer. Subsequently, a baking is performed on the SOG layer. The SOG layer is etched back to a predetermined depth. Next, a curing is performed...http://www.google.com/patents/US6794266?utm_source=gb-gplus-sharePatent US6794266 - Method for forming a trench isolation structure
