Semiconductor devices based on thin film transistors formed over substrates. In one embodiment, a semiconductor device comprises at least two thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating...http://www.google.com/patents/US6610996?utm_source=gb-gplus-sharePatent US6610996 - Semiconductor device using a semiconductor film having substantially no grain boundary
