A method for forming a contact well for a semiconductor device (10) is disclosed. According to this method, a first insulator layer (24) comprising an insulating material is formed around a gate (20). A contact well filler (32) is then formed adjoining the first insulator layer (24). A second insulator...http://www.google.com/patents/US6004870?utm_source=gb-gplus-sharePatent US6004870 - Method for forming a self-aligned contact
