In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixture has an affinity for a etchant gas...http://www.google.com/patents/US7316785?utm_source=gb-gplus-sharePatent US7316785 - Methods and apparatus for the optimization of etch resistance in a plasma processing system
