A method for producing a color CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. A silicon-nitride layer is deposited on the upper surface of the pixels, and is etched using a reactive ion etching (RIE) process to form microlenses....http://www.google.com/patents/US6221687?utm_source=gb-gplus-sharePatent US6221687 - Color image sensor with embedded microlens array
