The present invention discloses a novel integrated circuit capacitor and a method of forming such a capacitor. The capacitor formation begins with a base electrode 18 adjacent an insulating region 26. This base electrode 18 can comprise either polysilicon or a metal. A layer 28 of a first material, such...http://www.google.com/patents/US20020014646?utm_source=gb-gplus-sharePatent US20020014646 - Integrated circuit capacitor
