A method of forming a polycide-to-polysilicon capacitor simultaneously with a CMOS device with polycide gate is described. Field oxide regions, n-well and p-well regions, and gate oxide regions are formed in and on a silicon substrate. A first layer of polysilicon, having a suitable doping concentration,...http://www.google.com/patents/US5338701?utm_source=gb-gplus-sharePatent US5338701 - Method for fabrication of w-polycide-to-poly capacitors with high linearity
