A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode...http://www.google.com/patents/US7842594?utm_source=gb-gplus-sharePatent US7842594 - Semiconductor device and method for fabricating the same
