Disclosed is a method of forming a large number of monocrystalline silicon regions, of uniform orientation, on the surface of an insulator material. Initially, a large number of island regions of amorphous or polycrystalline silicon, thermally connected to one another in a predetermined direction by...http://www.google.com/patents/US4604159?utm_source=gb-gplus-sharePatent US4604159 - Method of forming a large number of monocrystalline semiconductor regions on the surface of an insulator
